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Technische Information / Technical Information
IGBT-Module IGBT-Modules
BSM 100 GB 60 DLC
Hochstzulassige Werte / Maximum rated values
Elektrische Eigenschaften / Electrical properties
Kollektor-Emitter-Sperrspannung collector-emitter voltage Kollektor-Dauergleichstrom DC-collector current Periodischer Kollektor Spitzenstrom repetitive peak collector current Gesamt-Verlustleistung total power dissipation Gate-Emitter-Spitzenspannung gate-emitter peak voltage Dauergleichstrom DC forward current Periodischer Spitzenstrom repetitive peak forw. current Grenzlastintegral der Diode 2 I t - value, Diode Isolations-Prufspannung insulation test voltage tP= 1ms Tc= 70C Tc= 25C tP= 1ms, Tc= 70C VCES IC,nom. IC ICRM 600 100 130 200 V A A A
Tc= 25C, Transistor
Ptot
445
W
VGES
+/- 20V
V
IF
100
A
IFRM
200
A
VR= 0V, tp= 10ms, Tvj= 125C
I2t
1.250
A2s
RMS, f= 50Hz, t= 1min.
VISOL
2,5
kV
Charakteristische Werte / Characteristic values
Transistor / Transistor
Kollektor-Emitter Sattigungsspannung collector-emitter saturation voltage Gate-Schwellenspannung gate threshold voltage Eingangskapazitat input capacitance Ruckwirkungskapazitat reverse transfer capacitance Kollektor-Emitter Reststrom collector-emitter cut-off current Gate-Emitter Reststrom gate-emitter leakage current f= 1MHz, Tvj= 25C, VCE= 25V, VGE= 0V VCE= 600V, VGE= 0V, Tvj= 25C VCE= 600V, VGE= 0V, Tvj= 125C VCE= 0V, VGE= 20V, Tvj= 25C IC= 100A, VGE= 15V, Tvj= 25C IC= 100A, VGE= 15V, Tvj= 125C IC= 1,5mA, VCE= VGE, Tvj= 25C VCE sat
min.
VGE(th) 4,5
typ.
1,95 2,20 5,5
max.
2,45 6,5 V V V
Cies
-
4,3
-
nF
Cres
-
0,4 1 1 -
500 400
nF A mA nA
ICES
IGES
-
prepared by: Andreas Vetter approved by: Michael Hornkamp
date of publication: 2000-04-26 revision: 1
1 (8)
BSM 100 GB 60 DLC 2000-02-08
Technische Information / Technical Information
IGBT-Module IGBT-Modules
BSM 100 GB 60 DLC
Charakteristische Werte / Characteristic values
Transistor / Transistor
IC= 100A, VCC= 300V Einschaltverzogerungszeit (ind. Last) turn on delay time (inductive load) VGE= 15V, RG= 2,2, Tvj= 25C VGE= 15V, RG= 2,2, Tvj= 125C IC= 100A, VCC= 300V Anstiegszeit (induktive Last) rise time (inductive load) VGE= 15V, RG= 2,2, Tvj= 25C VGE= 15V, RG= 2,2, Tvj= 125C IC= 100A, VCC= 300V Abschaltverzogerungszeit (ind. Last) turn off delay time (inductive load) VGE= 15V, RG= 2,2, Tvj= 25C VGE= 15V, RG= 2,2, Tvj= 125C IC= 100A, VCC= 300V Fallzeit (induktive Last) fall time (inductive load) VGE= 15V, RG= 2,2, Tvj= 25C VGE= 15V, RG= 2,2, Tvj= 125C Einschaltverlustenergie pro Puls turn-on energy loss per pulse Abschaltverlustenergie pro Puls turn-off energy loss per pulse Kurzschluverhalten SC Data Modulinduktivitat stray inductance module Modul-Leitungswiderstand, Anschlusse - Chip lead resistance, terminals - chip Tc= 25C IC= 100A, VCC= 300V, VGE= 15V RG= 2,2, Tvj= 125C, L = 15nH IC= 100A, VCC= 300V, VGE= 15V RG= 2,2, Tvj= 125C, L = 15nH tP 10sec, VGE 15V Tvj125C, VCC=360V, VCEmax= VCES -LCE *di/dt Eon tf 20 30 1,0 ns ns mJ td,off 130 150 ns ns tr 10 11 ns ns td,on 25 26 ns ns
min.
typ.
max.
Eoff
-
2,9
-
mJ
ISC
-
450
-
A
LCE
-
40
-
nH
RCC'+EE'
-
1,0
-
m
Charakteristische Werte / Characteristic values
Diode / Diode
Durchlaspannung forward voltage IF= 100A, VGE= 0V, Tvj= 25C IF= 100A, VGE= 0V, Tvj= 125C IF= 100A, -diF/dt= 4400A/sec Ruckstromspitze peak reverse recovery current VR= 300V, VGE= -10V, Tvj= 25C VR= 300V, VGE= -10V, Tvj= 125C IF= 100A, -diF/dt= 4400A/sec Sperrverzogerungsladung recoverred charge VR= 300V, VGE= -10V, Tvj= 25C VR= 300V, VGE= -10V, Tvj= 125C IF= 100A, -diF/dt= 4400A/sec Abschaltenergie pro Puls reverse recovery energy VR= 300V, VGE= -10V, Tvj= 25C VR= 300V, VGE= -10V, Tvj= 125C Erec 3,2 mJ mJ Qr 7,7 13 C C IRM 150 180 A A VF
min.
-
typ.
1,25 1,20
max.
1,6 V V
2 (8)
BSM 100 GB 60 DLC 2000-02-08
Technische Information / Technical Information
IGBT-Module IGBT-Modules
BSM 100 GB 60 DLC
Thermische Eigenschaften / Thermal properties
min.
Innerer Warmewiderstand thermal resistance, junction to case Ubergangs-Warmewiderstand thermal resistance, case to heatsink Hochstzulassige Sperrschichttemperatur maximum junction temperature Betriebstemperatur operation temperature Lagertemperatur storage temperature Transistor / transistor, DC Diode / diode, DC pro Modul / per module Paste= 1W/m*K / grease= 1W/m*K RthJC RthCK -
typ.
0,03
max.
0,28 0,50 K/W K/W K/W
Tvj
-
-
150
C
Top
-40
-
125
C
Tstg
-40
-
125
C
Mechanische Eigenschaften / Mechanical properties
Gehause, siehe Anlage case, see appendix Innere Isolation internal insulation Kriechstrecke creepage insulation Luftstrecke clearance CTI comperative tracking index Anzugsdrehmoment fur mech. Befestigung mounting torque Schraube M6 screw M6 M1 -15 Al2O3
15
mm
8,5
mm
275 5 +15 Nm %
Gewicht weight
G
180
g
Mit dieser technischen Information werden Halbleiterbauelemente spezifiziert, jedoch keine Eigenschaften zugesichert. Sie gilt in Verbindung mit den zugehorigen Technischen Erlauterungen. This technical information specifies semiconductor devices but promises no characteristics. It is valid in combination with the belonging technical notes.
3 (8)
BSM 100 GB 60 DLC 2000-02-08
Technische Information / Technical Information
IGBT-Module IGBT-Modules
BSM 100 GB 60 DLC
Ausgangskennlinie (typisch) Output characteristic (typical) I C= f (VCE)
VGE= 15V
200 180
Tvj = 25C
160 140
Tvj = 125C
IC [A]
120 100 80 60 40 20 0 0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5
VCE [V]
Ausgangskennlinienfeld (typisch) Output characteristic (typical)
200 180
VGE = 8V
I C= f (VCE)
Tvj= 125C
160 140
VGE = 9V VGE = 10V VGE = 12V VGE = 15V VGE = 20V
IC [A]
120 100 80 60 40 20 0 0,0 0,5
1,0
1,5
2,0
2,5
3,0
3,5
4,0
4,5
5,0
VCE [V]
4 (8)
BSM 100 GB 60 DLC 2000-02-08
Technische Information / Technical Information
IGBT-Module IGBT-Modules
BSM 100 GB 60 DLC
Ubertragungscharakteristik (typisch) Transfer characteristic (typical) I C= f (VGE)
VCE= 20V
200 180
Tvj = 25C
160 140
Tvj = 125C
IC [A]
120 100 80 60 40 20 0 5 6 7 8 9 10 11 12 13
VGE [V]
Durchlakennlinie der Inversdiode (typisch) Forward characteristic of inverse diode (typical)
200 180 160 140
Tvj = 25C Tvj = 125C
I F= f (VF)
IF [A]
120 100 80 60 40 20 0 0,0 0,2 0,4 0,6 0,8 1,0 1,2 1,4 1,6
VF [V]
5 (8)
BSM 100 GB 60 DLC 2000-02-08
Technische Information / Technical Information
IGBT-Module IGBT-Modules
BSM 100 GB 60 DLC
Schaltverluste (typisch) Switching losses (typical) E on= f (IC), Eoff= f (IC), Erec= f (IC)
RG,on= 2,2,=RG,off = 2,2 , VCC= 300V, Tvj= 125C ,= ,
6,0
Eon Eoff Erec
5,0
4,0 E [mJ]
3,0
2,0
1,0
0,0 0 20 40 60 80 100 120 140 160 180 200
IC [A]
Schaltverluste (typisch) Switching losses (typical)
3,5 3,0 2,5 E [mJ] 2,0 1,5 1,0 0,5 0,0 0 1 2 3 4
E on= f (RG), Eoff= f (RG), Erec= f (RG)
IC= 100A , VCC= 300V , Tvj = 125C
Eon Eoff Erec
5
6
7
8
9
10
RG []
6 (8)
BSM 100 GB 60 DLC 2000-02-08
Technische Information / Technical Information
IGBT-Module IGBT-Modules
BSM 100 GB 60 DLC
Transienter Warmewiderstand Transient thermal impedance Z thJC = f (t)
1
0,1
ZthJC [K / W]
Zth:IGBT Zth:Diode 0,01
0,001 0,001
0,01
0,1
1
10
t [sec] i ri [K/kW] i [sec] ri [K/kW] i [sec]
1 11,9 0,0018 176,2 0,0487 2 146,7 0,0240 169,0 0,0169 3 98,7 0,0651 106,1 0,1069 4 22,7 0,6626 48,7 0,9115
: IGBT : IGBT : Diode : Diode
Sicherer Arbeitsbereich (RBSOA) Reverse bias safe operation area (RBSOA)
220 200 180 160 140 120 100 IC,Modul IC,Chip
VGE= +15V, R G,off = 2,2, Tvj= 125C ,
IC [A]
80 60 40 20 0 0 100 200
300
400
500
600
700
VCE [V]
7 (8)
BSM 100 GB 60 DLC 2000-02-08
Technische Information / Technical Information
IGBT-Module IGBT-Modules
BSM 100 GB 60 DLC
Gehausemae / Schaltbild Package outline / Circuit diagram
13 10
M5
2,8 x 0,5
6
1
17
2
6
3
6 7
23 80 94
23
17
5 4
6 7 1 3 5 2 4
8 (8)
BSM 100 GB 60 DLC 2000-02-08
Terms & Conditions of Usage
Attention The present product data is exclusively subscribed to technically experienced staff. This Data Sheet is describing the specification of the products for which a warranty is granted exclusively pursuant the terms and conditions of the supply agreement. There will be no guarantee of any kind for the product and its specifications. Changes to the Data Sheet are reserved. You and your technical departments will have to evaluate the suitability of the product for the intended application and the completeness of the product data with respect to such application. Should you require product information in excess of the data given in the Data Sheet, please contact your local Sales Office via "www.eupec.com / sales & contact". Warning Due to technical requirements the products may contain dangerous substances. For information on the types in question please contact your local Sales Office via "www.eupec.com / sales & contact".

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